FITTING OF ROCKING CURVES FROM ION-IMPLANTED SEMICONDUCTORS

A simple fitting procedure is presented for the analysis of the strain profile in semiconductors; it has been applied to samples of ion-impl anted silicon. The calculated strain profiles for some experimental ro cking curves are compared with the simulated dopant-concentration prof iles and the energy profiles. A two-sided Gaussian has been shown to p roduce an adequate fit to the strain profile in ion-implanted semicond uctors. This procedure reduces the number of refinable parameters to o nly four and is favoured over changing the strain distribution as a fu nction of depth in a rapid uncorrelated way. The error between the mea sured and calculated rocking curves has been analysed as a function of the Gaussian parameters. Besides one sharp global minimum, many local minima exist. It is shown that smoothing of the rocking curves with a triangular shape results in a reduction of the number of local minima .