HIGH-ELECTRON-MOBILITY IN (INAS)N(GAAS)N SHORT-PERIOD SUPERLATTICES GROWN BY MOVPE FOR HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURE

(InAs)n(GaAs)n short period superlattices (SPSs) have been successfull y grown by a continuous MOVPE process on InP substrates. Their structu ral, optical, and electrical properties have been studied. The periodi c structures have been confirmed by x-ray measurements and (InAs)1(GaA s)1 SPSs have been clearly observed by transmission electron microscop ic characterization. The optical quality of the material has been test ed by 2K photoluminescence and excitonic recombinations have been obse rved. Mobilities as high as 10700 CM2.V-1.s-1 an 64000 CM2. V-1.s-1 fo r a sheet concentration of 3 x 10(12) cm-2 have been obtained at 300K and 77K, respectively.