OPTIMIZATION OF SELECTIVE-AREA GROWTH OF GAAS BY LOW-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY FOR MONOLITHIC INTEGRATED-CIRCUITS

GaAs MESFET device structures have been grown on silicon nitride or si licon dioxide masked 50 and 76 mm GaAs substrates by low pressure orga nometallic vapor phase epitaxy. Very smooth, featureless morphology an d 100 percent selectivity of GaAs islands have been achieved over a ra nge of growth conditions. Optimization of the GaAs p-buffer of the fie ld effect transistor structure has led to improved device performance, including increased breakdown voltage. Device characteristics of the 0.5 mum gate low noise metal semiconductor field-effect transistors fa bricated on these islands show good performance and wafer to wafer rep roducibility on the second device lot.