GROWTH-KINETICS OF GASB BY METALORGANIC VAPOR-PHASE EPITAXY

Authors
WEI GY PENG RW
Citation
Gy. Wei et Rw. Peng, GROWTH-KINETICS OF GASB BY METALORGANIC VAPOR-PHASE EPITAXY, Journal of electronic materials, 23(2), 1994, pp. 217-220
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
Journal title
Journal of electronic materials → ACNP
ISSN journal
03615235
Volume
23
Issue
2
Year of publication
1994
Pages
217 - 220
Database
ISI
SICI code
0361-5235(1994)23:2<217:GOGBMV>2.0.ZU;2-P
Abstract
The growth rates of GaSb by metalorganic vapor phase epitaxy were stud ied as functions of growth temperatures and partial pressures of precu rsors. A Langmuir-Hinshelwood model was used to explain the GaSb growt h rate in the chemical reaction controlled regime. The relationship be tween growth kinetics and epilayer qualities was discussed and propert ies of GaSb were obtained.