REACTION-KINETICS CONTROL IN PREPARATION OF CDTE AND HGCDTE BY HOT-WALL METALORGANIC VAPOR-PHASE EPITAXY

Authors
DING YQ WEI GY PENG RW
Citation
Yq. Ding et al., REACTION-KINETICS CONTROL IN PREPARATION OF CDTE AND HGCDTE BY HOT-WALL METALORGANIC VAPOR-PHASE EPITAXY, Journal of electronic materials, 23(2), 1994, pp. 221-224
Citations number
21
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
Journal title
Journal of electronic materials → ACNP
ISSN journal
03615235
Volume
23
Issue
2
Year of publication
1994
Pages
221 - 224
Database
ISI
SICI code
0361-5235(1994)23:2<221:RCIPOC>2.0.ZU;2-R
Abstract
The growth rates of CdTe and HgCdTe by hot wall metalorganic vapor pha se epitaxy were studied as functions of growth temperatures and partia l pressures of precursors. It is suggested that the growth of CdTe and HgCdTe was controlled by reaction kinetics. The relationship between growth processes and epilayer properties was discussed and high qualit y epilayers were obtained.