Yq. Ding et al., REACTION-KINETICS CONTROL IN PREPARATION OF CDTE AND HGCDTE BY HOT-WALL METALORGANIC VAPOR-PHASE EPITAXY, Journal of electronic materials, 23(2), 1994, pp. 221-224
The growth rates of CdTe and HgCdTe by hot wall metalorganic vapor pha
se epitaxy were studied as functions of growth temperatures and partia
l pressures of precursors. It is suggested that the growth of CdTe and
HgCdTe was controlled by reaction kinetics. The relationship between
growth processes and epilayer properties was discussed and high qualit
y epilayers were obtained.