CARBON AND HYDROGEN INCORPORATION IN ZNTE LAYERS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

The metalorganic chemical vapor deposition growth of ZnTe has been per formed at atmospheric pressure under helium and hydrogen carrier gases . Epitaxial growth was achieved on GaAs (100) substrates with the comb ination of diethylzinc and diethyltellurium as precursors. We have stu died the incorporation of carbon and hydrogen in as-grown layers of Zn Te by secondary ion mass spectroscopy analysis and out-diffusion exper iments with different carrier gases and growth temperatures. The amoun t of carbon and hydrogen incorporated in the ZnTe layers greatly depen ds on the nature of the gas considered. Under helium atmosphere, the a mount of carbon and hydrogen incorporated are greater than under H-2 w ith an origin from organometallic precursors.