ACCURATE DETERMINATION OF THE BAND-OFFSET OF A QUANTUM SEMICONDUCTOR STRUCTURE FROM ITS CAPACITANCE-VOLTAGE PROFILE - APPLICATION TO AN INPGA0.47IN0.53AS/INP SINGLE-QUANTUM-WELL/

Authors
GUILLOT C DUGAY M BARBARIN F SOULIERE V ABRAHAM P MONTEIL Y
Citation
C. Guillot et al., ACCURATE DETERMINATION OF THE BAND-OFFSET OF A QUANTUM SEMICONDUCTOR STRUCTURE FROM ITS CAPACITANCE-VOLTAGE PROFILE - APPLICATION TO AN INPGA0.47IN0.53AS/INP SINGLE-QUANTUM-WELL/, Journal of electronic materials, 26(2), 1997, pp. 6-8
Citations number
12
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
Journal title
Journal of electronic materials → ACNP
ISSN journal
03615235
Volume
26
Issue
2
Year of publication
1997
Pages
6 - 8
Database
ISI
SICI code
0361-5235(1997)26:2<6:ADOTBO>2.0.ZU;2-S
Abstract
We discuss the possible analysis of an electron distribution obtained by capacitance-voltage profiling for the determination of the conducti on band offset of a single quantum well. We show that, for this method which requires only relatively light experimental equipment, a noncon suming computational time interpretation can be set up within a quite satisfactory degree of accuracy. As an application, we report the stud y of a lattice matched InP/Ga0.47In0.53As/InP quantum well for which w e get Delta E(c) = (200 +/- 10) meV, in good agreement with ether meas urements upon this system.