Ch. Mikkelson et al., COUPLED-QUANTUM-WELL FIELD-EFFECT RESONANT-TUNNELING TRANSISTOR FOR MULTIVALUED LOGIC MEMORY APPLICATIONS, I.E.E.E. transactions on electron devices, 41(2), 1994, pp. 132-137
A vertical field-effect resonant tunneling transistor is demonstrated
consisting of a triple-barrier, double-well resonant tunneling diode (
3bRTD) that can be depleted by the action of side gates. The 3bRTD fea
tures a double peak current-voltage characteristic in which the second
valley current is less than the first valley current. Combination or
the resonant tunneling transistor and a constant current load is shown
to yield both binary and ternary logic and memory functions.