COUPLED-QUANTUM-WELL FIELD-EFFECT RESONANT-TUNNELING TRANSISTOR FOR MULTIVALUED LOGIC MEMORY APPLICATIONS

Authors
MIKKELSON CH SEABAUGH AC BEAM EA LUSCOMBE JH FRAZIER GA
Citation
Ch. Mikkelson et al., COUPLED-QUANTUM-WELL FIELD-EFFECT RESONANT-TUNNELING TRANSISTOR FOR MULTIVALUED LOGIC MEMORY APPLICATIONS, I.E.E.E. transactions on electron devices, 41(2), 1994, pp. 132-137
Citations number
20
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
41
Issue
2
Year of publication
1994
Pages
132 - 137
Database
ISI
SICI code
0018-9383(1994)41:2<132:CFRTFM>2.0.ZU;2-P
Abstract
A vertical field-effect resonant tunneling transistor is demonstrated consisting of a triple-barrier, double-well resonant tunneling diode ( 3bRTD) that can be depleted by the action of side gates. The 3bRTD fea tures a double peak current-voltage characteristic in which the second valley current is less than the first valley current. Combination or the resonant tunneling transistor and a constant current load is shown to yield both binary and ternary logic and memory functions.