THE PERFORMANCE AND RELIABILITY OF 0.4 MICRON MOSFETS WITH GATE OXYNITRIDES GROWN BY RAPID THERMAL-PROCESSING USING MIXTURES OF N2O AND O2

Authors
OKADA Y TOBIN PJ RUSHBROOK P DEHART WL
Citation
Y. Okada et al., THE PERFORMANCE AND RELIABILITY OF 0.4 MICRON MOSFETS WITH GATE OXYNITRIDES GROWN BY RAPID THERMAL-PROCESSING USING MIXTURES OF N2O AND O2, I.E.E.E. transactions on electron devices, 41(2), 1994, pp. 191-197
Citations number
19
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
41
Issue
2
Year of publication
1994
Pages
191 - 197
Database
ISI
SICI code
0018-9383(1994)41:2<191:TPARO0>2.0.ZU;2-4
Abstract
We studied the effect of interfacial nitrogen concentration on device characteristics with gate oxynitrides grown from mixtures of N2O and O 2 by rapid thermal processing. The performance and reliability of MOS capacitors fabricated by a four mask process and MOSFET's fabricated b y a 0.4mum twin-well process were examined. No degradation of the curr ent drive of n-and p-MOSFET's in the linear and the saturation region was observed due to oxynitridation. The reliability of gate dielectric s represented by charge-to-breakdown for substrate injection and hot c arrier immunity of n-MOSFET's is improved with increasing interfacial nitrogen concentration.