LATERAL POLYSILICON PN DIODES - CURRENT-VOLTAGE CHARACTERISTICS SIMULATION BETWEEN 200-K AND 400-K USING A NUMERICAL APPROACH

The current-voltage characteristics of lateral pn diodes fabricated in polysilicon layer grown by LPCVD on oxidized silicon substrates are a nalyzed versus temperature. The simulation proposed by Greve using the analytical current modeling is applied to forward and reverse junctio n currents for various temperatures; this modeling shows its limitatio ns. Then to fit the experimental characteristics at low and high tempe ratures as well as at low and high current levels, a numerical modelin g is developed taking into account the local electrical field effect o n recombination and generation mechanisms at grain boundaries in the w hole of the structure, i.e., quasi-neutral and depleted regions. This modeling allows to fit the complete I-V experimental curves in the who le of the considered temperature range (200 K-400 K) with physical acc eptable parameters.