SOI MOSFET EFFECTIVE CHANNEL MOBILITY

Authors
SHERONY MJ SU LT CHUNG JE ANTONIADIS DA
Citation
Mj. Sherony et al., SOI MOSFET EFFECTIVE CHANNEL MOBILITY, I.E.E.E. transactions on electron devices, 41(2), 1994, pp. 276-278
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
41
Issue
2
Year of publication
1994
Pages
276 - 278
Database
ISI
SICI code
0018-9383(1994)41:2<276:SMECM>2.0.ZU;2-Z
Abstract
The standard bulk MOSFET definition for effective electric field is mo dified for SOI devices to account for nonzero electric field at the ba ck oxide interface. The effective channel mobility in fully-depleted n -channel SOI MOSFET's is shown to be independent of applied back-gate bias when the modified E(eff) definition is used. The effective channe l mobility as a function of E(eff) is also shown to be independent of film thickness for fully-depleted devices.