EFFECT OF APPLICATION OF A MAGNETIC-FIELD DURING CRYSTAL-GROWTH ON THE PHOTOLUMINESCENCE CHARACTERISTICS OF GE-DOPED LIQUID ENCAPSULATED CZOCHRALSKI-GROWN GAAS

Authors
KANG JY HOSHIKAWA K TAJIMA M FUKUDA T
Citation
Jy. Kang et al., EFFECT OF APPLICATION OF A MAGNETIC-FIELD DURING CRYSTAL-GROWTH ON THE PHOTOLUMINESCENCE CHARACTERISTICS OF GE-DOPED LIQUID ENCAPSULATED CZOCHRALSKI-GROWN GAAS, Journal of crystal growth, 135(3-4), 1994, pp. 623-628
Citations number
12
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
135
Issue
3-4
Year of publication
1994
Pages
623 - 628
Database
ISI
SICI code
0022-0248(1994)135:3-4<623:EOAOAM>2.0.ZU;2-0