ANALYSIS OF PARTIAL AND STAIR-ROD DISLOCATIONS BY LARGE-ANGLE CONVERGENT-BEAM ELECTRON-DIFFRACTION

It is shown how large angle convergent beam electron diffraction (LACB ED) can be used to analyse the Burgers vectors of partial dislocations in Si, GaAs and CdTe. By selecting reflections in which adjoining sta cking faults are out of contrast, it is demonstrated that the LACBED t echnique can be used to analyse Shockley and Frank partial dislocation s, of 1/6[110] type present at stacking fault instersections. The pote ntial of the technique for studying grain boundary and dissociated dis locations in general is discussed.