TIME STABILITY OF FE FILMS EPITAXIALLY GROWN ON A GAAS SUBSTRATE

Authors
WEISSMAN J ZOLOTOYABKO E LEVIN L GINZBURG A
Citation
J. Weissman et al., TIME STABILITY OF FE FILMS EPITAXIALLY GROWN ON A GAAS SUBSTRATE, Materials chemistry and physics, 37(2), 1994, pp. 175-179
Citations number
18
Categorie Soggetti
Material Science
Journal title
Materials chemistry and physics → ACNP
ISSN journal
02540584
Volume
37
Issue
2
Year of publication
1994
Pages
175 - 179
Database
ISI
SICI code
0254-0584(1994)37:2<175:TSOFFE>2.0.ZU;2-9
Abstract
The system consisting of Fe film epitaxially grown on a GaAs substrate was investigated by means of X-ray powder diffractometry and multicry stal X-ray diffractometry. Experimental data provide evidence that no new phases were formed in the two years following the system's prepara tion. The temporal stability thus observed is analyzed on the basis of diffusion processes.