ELECTRICAL-TRANSPORT CHARACTERIZATIONS OF NITROGEN-DOPED ZNSE AND ZNTE FILMS

Authors
FAN Y HAN J HE L SARAIE J GUNSHOR RL HAGEROTT M NURMIKKO AV
Citation
Y. Fan et al., ELECTRICAL-TRANSPORT CHARACTERIZATIONS OF NITROGEN-DOPED ZNSE AND ZNTE FILMS, Journal of electronic materials, 23(3), 1994, pp. 245-249
Citations number
21
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
Journal title
Journal of electronic materials → ACNP
ISSN journal
03615235
Volume
23
Issue
3
Year of publication
1994
Pages
245 - 249
Database
ISI
SICI code
0361-5235(1994)23:3<245:ECONZA>2.0.ZU;2-O
Abstract
Temperature-dependent Hall effect measurements are reported on a serie s of nitrogen doped ZnSe and ZnTe epilayers using a van der Pauw confi guration. A Zn(Se,Te) pseudo-graded band gap layer was used to form oh mic contacts to p-type ZnSe. The activation energy of nitrogen in ZnSe at the infinite dilution limit was extrapolated to be 114 meV. For a ZnTe film having a room temperature free hole concentration of p = 4.1 x 10(16) cm-3, the activation energy of the nitrogen acceptors was fo und to be 46 meV.