GAS-SOURCE MOLECULAR-BEAM EPITAXY OF ZNSE AND ZNSE-N

The use of gas source molecular beam epitaxy, using hydrogen selenide and elemental Zn as source materials, has resulted in the growth of hi gh quality ZnSe on closely lattice-matched GaAs and (In,Ga)P. The undo ped ZnSe epilayers are comparable in quality to material grown by mole cular beam epitaxy, as indicated by narrow double-crystal x-ray diffra ction rocking curves and intense photoluminescence dominated by a sing le donor-bound near-bandedge excitonic feature. Nitrogen species, deri ved from a radio frequency plasma source, are successfully used as acc eptor impurities for ZnSe; photoluminescence spectra confirm the incor poration of nitrogen by the presence of the expected donor-to-acceptor pair recombination. Atomic concentrations of nitrogen as high as 5 x 10(18) cm-3, are measured by secondary ion mass spectroscopy. Thus far , capacitance-voltage measurements indicate net acceptor concentration s (N(A) - N(D)) of approximately 10(17) cm-3.