CDZNSE ZNSE STRAINED-LAYER SUPERLATTICES DISORDERED BY GERMANIUM DIFFUSION/

We have investigated the phenomenon of layer disordering in CdZnSe/ZnS e strained layer superlattices (SLSs) by Ge diffusion and have fabrica ted CdZnSe/ZnSe optical waveguides using the Ge-induced disordering. B oth the as-grown sample and the sample annealed without a Ge layer sho wed several orders of well-resolved double crystal x-ray satellite pea ks due to SLS periodic structure. However, the satellite peaks complet ely disappeared in the Ge-diffused sample, indicating that the SLS str ucture was disordered by the Ge diffusion and not caused by the anneal ing process. Photoluminescence (PL) measurements at 1.4K of both the a s-grown and the annealed samples without Ge diffusion show intense, sh arp excitonic emission around 483 nm in CdZnSe/ZnSe SLS. After Ge diff usion, the PL peaks shift to higher energy confirming the layer disord ering of the SLS. The blue shift due to disordering was also observed in the PL at room temperature (RT). The optical guided mode in the SLS guiding layer confined by the disordered alloy was confirmed. Lateral optical confinement in the stripe geometry laser was also confirmed b y observing the RT stimulated emission produced by optical pumping.