TRANSIENT GRATING MEASUREMENTS OF AMBIPOLAR DIFFUSION AND CARRIER RECOMBINATION IN INGAP INALP MULTIPLE-QUANTUM WELLS AND INGAP BULK/

Authors
PRASAD M MARTINEZ OE MENONI CS ROCCA JJ CHILLA JLA HAFICH MJ ROBINSON GY
Citation
M. Prasad et al., TRANSIENT GRATING MEASUREMENTS OF AMBIPOLAR DIFFUSION AND CARRIER RECOMBINATION IN INGAP INALP MULTIPLE-QUANTUM WELLS AND INGAP BULK/, Journal of electronic materials, 23(3), 1994, pp. 359-362
Citations number
17
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
Journal title
Journal of electronic materials → ACNP
ISSN journal
03615235
Volume
23
Issue
3
Year of publication
1994
Pages
359 - 362
Database
ISI
SICI code
0361-5235(1994)23:3<359:TGMOAD>2.0.ZU;2-4
Abstract
The ambipolar diffusion coefficient and carrier recombination lifetime in InGaP/InAlP multiple quantum wells and InGaP epitaxial layers grow n by gas source molecular beam epitaxy have been determined by measuri ng the diffraction efficiency decay of transient gratings induced by p icosecond laser pulses. The multiple quantum well room temperature amb ipolar diffusion coefficient of carrier transport parallel to the grow th plane was measured to be approximately half that of the bulk materi al.