M. Prasad et al., TRANSIENT GRATING MEASUREMENTS OF AMBIPOLAR DIFFUSION AND CARRIER RECOMBINATION IN INGAP INALP MULTIPLE-QUANTUM WELLS AND INGAP BULK/, Journal of electronic materials, 23(3), 1994, pp. 359-362
The ambipolar diffusion coefficient and carrier recombination lifetime
in InGaP/InAlP multiple quantum wells and InGaP epitaxial layers grow
n by gas source molecular beam epitaxy have been determined by measuri
ng the diffraction efficiency decay of transient gratings induced by p
icosecond laser pulses. The multiple quantum well room temperature amb
ipolar diffusion coefficient of carrier transport parallel to the grow
th plane was measured to be approximately half that of the bulk materi
al.