PROPERTIES OF SILICON DOPED WITH MAGNESIUM DURING GROWTH BY THE CZOCHRALSKI TECHNIQUE

Authors
BORSHCHENSKII VV BRINKEVICH DI PETROV VV
Citation
Vv. Borshchenskii et al., PROPERTIES OF SILICON DOPED WITH MAGNESIUM DURING GROWTH BY THE CZOCHRALSKI TECHNIQUE, Inorganic materials, 30(1), 1994, pp. 26-27
Citations number
6
Categorie Soggetti
Material Science
Journal title
Inorganic materials → ACNP
ISSN journal
00201685
Volume
30
Issue
1
Year of publication
1994
Pages
26 - 27
Database
ISI
SICI code
0020-1685(1994)30:1<26:POSDWM>2.0.ZU;2-P