IN-SITU REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OBSERVATION OF LASER-TRIGGERED GAP GROWTH IN CHEMICAL BEAM EPITAXY

Surface reaction triggered by N2 laser irradiation onto adsorbed triet hylgallium (TEGa) and reaction with phosphorus in chemical beam epitax y (CBE) was studied by growth experiment and intensity change of refle ction high-energy electron diffraction (RHEED). The growth rate shows saturation with a high TEGa supply, which suggests that the adsorption of TEGa on a surface is saturated. The change of RHEED oscillation wa s different from that of a continuous reaction. The result showed that the decomposition of TEGa and formation of GaP occur alternately unde r continuous supply of TEGa and PH3.