CHEMICAL BEAM EPITAXIAL-GROWTH OF INGAAS USING A NEW PRECURSOR TRI-ISOPROPYLGALLIUM

The temperature and As overpressure dependencies of group III composit ion in the chemical beam epitaxial growth of InGaAs(P) using a new Ga precursor, tri-isopropylgallium, are investigated. The Ga/In incorpora tion ratio is determined from the depth profile of secondary ion mass spectroscopy, A slightly reduced temperature sensitivity in the ternar y growth rate is noticed, compared to the growth using triethylgallium . However, in spite of a substantial difference in their binary growth characteristics, similar temperature dependencies of Ga/In compositio n ratio for both Ga-precursors suggest a dominant role of In-induced G a-alkyl desorption.