METALORGANIC MOLECULAR-BEAM EPITAXY OF III-V COMPOUNDS USING TERTIARYBUTYL-V AS GROUP-V SOURCES

This paper reports metalorganic molecular beam epitaxy of GaAs and InP on GaAs(100), and GaP on Si(100) using TBAs and TBP as group-V source s and TEGa and TMIn as group-III sources. It is found that the growth of GaAs is dominated by thermal decomposition of TEGa, while the growt h of GaP and InP is influenced by both the reacting group-III and the phosphorus species. The hole concentration of the GaAs epilayers grown at 300 K decreases from 7.9x10(18) to 3.4x10(18) CM-3 with increasing substrate temperature, presumably due to a decrease in sticking coeff icient of alkyls. PL spectra from the epilayers at 4.2 K show dominant emissions due to transition between free electrons and acceptors, whi ch is in agreement with the electrical results.