CHEMICAL BEAM EPITAXY OF INP ON PLANAR AND NONPLANAR SUBSTRATES

High purity InP layers have been grown by chemical beam epitaxy (CBE) using H-2 as the carrier gas for transporting the metal alkyl TMI into the growth chamber. InP layers exhibiting Hall mobility as high as 23 8,000 cm2/V.s at 77 K and with a peak value of 311,000 cm2/V.s at 50 K and residual impurity concentration of 6 X 10(13) CM-3 at 77 K were g rown at 500-degrees-C using low V/III ratio (2.2) and PH3 cracking cel l temperature of 950-degrees-C. These values are the highest mobility values ever reported for InP grown by any molecular beam technique. Se lective embedded growth (SEG) of InP and InGaAs was achieved in 2.0 mu m deep trenches opened in Si3N4 masks on InP substrates. Overgrowth of InP on corrugated InP substrates was also achieved without damaging t he surface grating profile.