HEAVILY CARBON-DOPED P-TYPE GAAS AND IN0.53GA0.47AS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY USING CARBON TETRABROMIDE

Authors
TU CW LIANG BW CHIN TP
Citation
Cw. Tu et al., HEAVILY CARBON-DOPED P-TYPE GAAS AND IN0.53GA0.47AS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY USING CARBON TETRABROMIDE, Journal of crystal growth, 136(1-4), 1994, pp. 191-194
Citations number
24
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
136
Issue
1-4
Year of publication
1994
Pages
191 - 194
Database
ISI
SICI code
0022-0248(1994)136:1-4<191:HCPGAI>2.0.ZU;2-4
Abstract
Highly p-type carbon-doped GaAs and In0.53Ga0.47As grown by gas-source molecular beam epitaxy were obtained by using carbon tetrabromide as the carbon source. In the low 10(19) CM-3 range almost all carbon atom s are electrically active in GaAs, and at least 85 % of the carbon ato ms are activated at a concentration as high as 1.2 X 10(20) cm-3. A ho le concentration of 9 X 10(19) cm-3 in In0.53Ga0.47As, among the highe st reported to date, was achieved. No hydrogenation problem was observ ed.