STRAIN AND AS SPECIES-DEPENDENT GROUP-V INCORPORATION IN GAASP DURINGGAS-SOURCE MOLECULAR-BEAM EPITAXY

We report anion incorporation into GaAsP during gas source molecular b eam epitaxy that vary systematically with the alloy lattice constant a s it changes from a relaxed layer to an elastically strained component in non-pseudomorphic and strain balanced superlattices. We measure si gnificant differences in incorporation when incident arsenic is As4 As 2, or cracked AsH3, because in the latter case, monomers are the princ ipal output species of our hydride crackers.