GROWTH PARAMETER OPTIMIZATION OF SHORT-PERIOD (LESS-THAN-50-ANGSTROM INGAAS INP SHORT SHORT-PERIOD SUPERLATTICES BY CHEMICAL BEAM EPITAXY FOR PHOTONIC DEVICES/

In this work, we describe the influence of the growth parameters on op tical and crystallographic properties of InGaAs/InP short period super lattices (SPSLs). In particular, the optimized growth conditions appli ed for multi-quantum wells (MQWs) are no longer valid when the total p eriod thickness is below 85 angstrom and quasi-continuous growth inter ruption times are required. Structures with 31 angstrom period thickne ss with excellent high resolution X-Tay diffraction (HRXRD) and low te mperature photoluminescence (PL) linewidth of 28 meV have been grown. Differential transmission spectra of barrier reservoir and quantum wel l electron transfer (BRAQWET) structures in which SPSLs substitute the corresponding quaternary (1.25 mum) layer show similar behaviour in t he corresponding structures.