GROWTH OF GAINAS(P) INP MULTIQUANTUM BARRIER BY CHEMICAL BEAM EPITAXY/

A multi-quantum barrier (MQB) using the GaInAsP/InP system has been de monstrated for the first time. Some n-i-n tunneling diodes consisting of MQBs and bulk barriers were grown by chemical beam epitaxy (CBE). F rom the measurement of 77 K current-voltage (I-V) characteristics, we have confirmed the carrier confinement effect by the MQB. Moreover, by measuring of the excitation power dependence of the photoluminescence (PL) peak intensity at room temperature, it was obtained that the int ensity of the sample with MQB was about 3 times greater than that with a bulk barrier. From the measurement of PL peak intensity and I-V cha racteristics of an n-i-n tunneling diode, we have experimentally verif ied the effect of electron wave rejection of a GaInAs(P)/InP MQB.