OPTICAL-PROPERTIES OF INAS ALSB SUPERLATTICES GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY/

InAs/AlSb superlattices (SLs) have been studied by gas source molecula r beam epitaxy/gas source migration enhanced epitaxy (GSMBE/GSMEE). Re flection high-energy electron-diffraction (RHEED) intensity oscillatio n measurements show that In and Sb atoms move toward the surface durin g MEE growth through the exchange process of constituent atoms, althou gh the movement of In atoms can be reduced by lowering the growth temp erature. Raman scattering measurements on the InAs/AlSb SLs show that the formation of atomically controlled heterointerfaces is difficult. However, PL (photoluminescence) measurements show that the optical pro perties of InAs/AlSb quantum wells (QWs) depend strongly on the shutte r sequences at the interfaces. 77 K PL from the QWs with InSb-type int erfaces is much stronger than that with AlAs-type interfaces, and thei r temperature variation of the former is much weaker than that of the latter.