GAS-SOURCE MOLECULAR-BEAM EPITAXY AND LUMINESCENCE CHARACTERIZATION OF STRAINED SI1-XGEX SI QUANTUM-WELLS/

We describe gas-source molecular beam epitaxy (MBE) and luminescence c haracterization of strain Si1-xGex/Si quantum wells (QWs). Successful and reproducible growth of strained QWs is demonstrated, addressing th e significance of selecting a higher growth temperature to establish a high degree of structural integrity and to maintain the crystallinity in terms of ''optical'' quality. Excellent heterointerface transience was evidenced by an almost perfect match between the spectral shift d ue to exciton confinement and the theoretical calculation. A good spat ial uniformity in terms of well width and composition was obtained whe n QWs are grown in the adsorption/dissociation-limited growth regime.