IN-SITU PROBING OF THE ZNSE METALORGANIC MOLECULAR-BEAM EPITAXY GROWTH-PROCESS BY SURFACE PHOTO-INTERFERENCE METHOD

The metalorganic molecular beam epitaxy (MOMBE) growth process of ZnSe on GaAs was characterized by the surface photo-interference (SPI) met hod. The SPI signal traces were monitored in various experiments where the source gas cracking conditions were varied. The signal features, such as intensity and polarity, were drastically modified by the Se so urce gas cracking, whereas the signal was hardly affected by the Zn so urce gas cracking. Zn-terminated surfaces formed by uncracked dimethyl zinc (DMZn) gas supply as well as the cracked gas supply are likely to be covered with Zn atoms. On the other hand, the Se-terminated surfac e formed by the uncracked H2Se gas supply is probably covered with H2S e molecules.