HIGH-FIELD STRESSING EFFECTS ON THE SPLIT N2O GROWN THIN GATE DIELECTRIC BY RAPID THERMAL-PROCESSING

Authors
SUBRAHMANYAM PVS PRABHAKAR A VASI J
Citation
Pvs. Subrahmanyam et al., HIGH-FIELD STRESSING EFFECTS ON THE SPLIT N2O GROWN THIN GATE DIELECTRIC BY RAPID THERMAL-PROCESSING, I.E.E.E. transactions on electron devices, 44(3), 1997, pp. 505-508
Citations number
17
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
44
Issue
3
Year of publication
1997
Pages
505 - 508
Database
ISI
SICI code
0018-9383(1997)44:3<505:HSEOTS>2.0.ZU;2-3
Abstract
Highly reliable thin oxynitride layers of very good Si/SiO2 interface endurance were grown on silicon wafers with a split N2O cycle (N2O/O-2 /N2O) employing Rapid Thermal Processing (RTP). Excellent electrical c haracteristics with reduced positive charge generation, electron trapp ing and/or interface state generation were achieved under high field s tressing compared to pure N2O dielectric.