TRANSIENT EFFECTS IN ACCUMULATION-MODE P-CHANNEL SOI MOSFETS OPERATING AT 77-K

This paper critically examines the conduction mechanisms in accumulati on mode p-channel SOI MOSFET's operating at cryogenic temperatures. In particular, attention is given to the body current component, which i n most cases is experimentally not observed at 77 K or 4.2 K. As will be demonstrated, both the body current and the back accumulation curre nt show pronounced transient effects at low temperatures, which are re lated to the slow generation/recombination of minority carriers. This is caused by deep depletion from the front interface, which suppresses these current components. By the application of either a light pulse or a large drain voltage V(ds), minority carriers are generated nearly instantaneously in the body region, rendering the body and the back a ccumulation components clearly visible.