A NEW LINEAR SWEEP TECHNIQUE TO MEASURE GENERATION LIFETIMES IN THIN-FILM SOI MOSFETS

Authors
VENKATESAN S PIERRET RF NEUDECK GW
Citation
S. Venkatesan et al., A NEW LINEAR SWEEP TECHNIQUE TO MEASURE GENERATION LIFETIMES IN THIN-FILM SOI MOSFETS, I.E.E.E. transactions on electron devices, 41(4), 1994, pp. 567-574
Citations number
16
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
41
Issue
4
Year of publication
1994
Pages
567 - 574
Database
ISI
SICI code
0018-9383(1994)41:4<567:ANLSTT>2.0.ZU;2-V
Abstract
A new linear sweep technique to measure generation lifetimes (tau(g)) in silicon-on-insulator (SOI) material is presented. A detailed analyt ic formulation is applied to fully-depleted and partially-depleted SOI films and used to simulate the behavior of the SOI devices under line ar sweep conditions. A novel algorithm accurately determines the effec tive generation width in fully depleted SOI films. The measurement tec hnique is experimentally verified by applying the algorithm to fully d epleted SIMOX P-channel MOSFET's where observed lifetimes ranged from 0.3mus to 2.4mus.