THE POOLE-FRENKEL EFFECT IN 6H-SIC DIODE CHARACTERISTICS

Authors
PELAZ L ORANTES JL VINCENTE J BAILON LA BARBOLLA J
Citation
L. Pelaz et al., THE POOLE-FRENKEL EFFECT IN 6H-SIC DIODE CHARACTERISTICS, I.E.E.E. transactions on electron devices, 41(4), 1994, pp. 587-591
Citations number
22
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
41
Issue
4
Year of publication
1994
Pages
587 - 591
Database
ISI
SICI code
0018-9383(1994)41:4<587:TPEI6D>2.0.ZU;2-Y
Abstract
The large bandgap of SiC makes the recombination mechanism the main pr ocess in determining the forward current in a large range of temperatu re. We have added the Poole-Frenkel effect to the conventional Shockle y-Read-Hall (SRH) term of the numerical device simulator MEDICI. This paper shows the influence of this effect on SiC.