IMPROVEMENT OF HOT-CARRIER AND RADIATION HARDNESSES IN METAL-OXIDE-NITRIDE-OXIDE SEMICONDUCTOR-DEVICES BY IRRADIATION-THEN-ANNEAL TREATMENTS

Authors
CHANGLIAO KS HWU JG
Citation
Ks. Changliao et Jg. Hwu, IMPROVEMENT OF HOT-CARRIER AND RADIATION HARDNESSES IN METAL-OXIDE-NITRIDE-OXIDE SEMICONDUCTOR-DEVICES BY IRRADIATION-THEN-ANNEAL TREATMENTS, I.E.E.E. transactions on electron devices, 41(4), 1994, pp. 612-614
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
41
Issue
4
Year of publication
1994
Pages
612 - 614
Database
ISI
SICI code
0018-9383(1994)41:4<612:IOHARH>2.0.ZU;2-O
Abstract
The hardnessses of hot-carrier and radiation of metal-oxide nitride-ox ide semiconductor (MONOS) devices can be improved by the irradiation-t hen-anneal (ITA) treatments. Each treatment includes an irradiation of Co-60 with a total dose of 1M rads(SiO2) and an anneal in N2 at 400-d egrees-C for 10 min successively. This improvement can be explained by the release of SiO2/Si interfacial strain.