SIC MOS INTERFACE CHARACTERISTICS

Authors
BROWN DM GHEZZO M KRETCHMER J DOWNEY E PIMBLEY J PALMOUR J
Citation
Dm. Brown et al., SIC MOS INTERFACE CHARACTERISTICS, I.E.E.E. transactions on electron devices, 41(4), 1994, pp. 618-620
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
41
Issue
4
Year of publication
1994
Pages
618 - 620
Database
ISI
SICI code
0018-9383(1994)41:4<618:SMIC>2.0.ZU;2-B
Abstract
It is well known that SiC can be thermally oxidized to form SiO2 layer s. And Si MOSFET IC's using thermally grown SiO2 gate dielectrics are the predominant IC technology in the world today. However the SiC/SiO2 interface has not been well characterized as was the case for Si MOS in the early 1960's. This paper presents data which for the first time characterizes the SiC/SiO2 interface and explains one of the previous ly unexplained abnormalities observed in the characteristics of SiC MO SFET's.