N. Gopalakrishnan et al., INVESTIGATIONS ON THE 2-DIMENSIONAL NUCLEATION AND GROWTH-KINETICS OFINP VAPOR-PHASE EPITAXY, Journal of crystal growth, 137(1-2), 1994, pp. 235-239
In this paper the initial stage and growth kinetics of InP vapour phas
e epitaxy in the In-PH3-HCI-H-2 system have been analysed. To evaluate
the two-dimensional nucleation parameters, correction due to the depe
ndence of interfacial tension on the cluster size is included in the c
lassical heterogeneous nucleation theory. An expression for the growth
rate has been developed by following a reaction scheme in terms of de
position temperature and partial pressure of constituent gas species a
nd so on. A numerical analysis of our theoretical results has been mad
e.