Ns. Takahashi et al., ALGAINP ALGAAS DOUBLE-HETEROSTRUCTURE LIGHT-EMITTING DIODE GROWN BY LIQUID-PHASE EPITAXY/, Journal of crystal growth, 137(1-2), 1994, pp. 240-244
AlGaInP is the most promising material for visible wavelength light so
urces for laser-printing and audio compact disc systems. Unfortunately
, it is difficult to grow controllably this crystal by conventional li
quid phase epitaxy (LPE) growth, due to the extremely large distributi
on coefficient of Al in the In melt. In this work, the AlGaInP layers
have been grown in a very short time on an Al0.9Ga0.1As buffer layer f
rom a non-equilibrium solution with a very high Al fraction. The AlGaI
nP source melt was prepared by changing the Al mole fraction for a fix
ed value of Ga and P mole fractions which were for InGaP lattice-match
ed to GaAs. A mirror-like surface has been obtained at an Al mole frac
tion X(Al)1 between 1.96 x 10(-5) and 3.21 x 10(-4). Photoluminescence
measurements indicated that the peak wavelength shifted to the shorte
r side and show that Al was incorporated into the crystals. The shorte
st peak wavelength observed at room temperature was 635 nm from the Al
GaInP layer grown at X(Al)1 = 3.21 x 10(-4) AlGaAs/AlGaInP/AlGaAs doub
le heterostructure (DH) light emitting diodes (LEDs) were fabricated b
y this growth method with X(Al)1 = 1.82 x 10(-4). The electroluminesce
nce (EL) emission peak at 645 nm with full width at half maximum of 66
meV was obtained at room temperature.