INVESTIGATION OF THE 1.20-EV PHOTOLUMINESCENCE BAND IN RAPID THERMAL ANNEALED INP

Deep level photoluminescence of rapid thermal annealed (RTA) undoped l iquid-encapsulated Czochralski InP has been studied. A band occurring at 1.20 eV, not observed in as-grown sample, became a dominant deep le vel peak after a 10-s rapid thermal annealing process. However, after high temperature or prolonged annealing, it disappeared again. Ion imp lantation by various species such as phosphorus, argon, and tin was ca rried out. The 1.20-eV band observed after RTA was found to be suppres sed by the phosphorus-implantation but enhanced by tin implantation, s uggesting that its origin may be due to the formation of phosphorus va cancy single point defect.