EXPERIMENTAL AND COMPUTER-SIMULATION STUDIES OF THE SURFACE-MORPHOLOGY OF HG1-XMNXTE EPITAXIAL LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

The surface morphology of Hg1-xMnxTe epitaxial layers, including HgTe, grown by metalorganic vapour phase epitaxy on GaAs and Cd1-xZnxTe sub strates were investigated. The effects of growth temperature, substrat e cleaning conditions, composition and orientation on the incidence of hillocks and pits and on general faceting are reported. A simple one- dimensional computer simulation was also developed and used to analyse the observed morphologies. These studies showed that surface morpholo gy was improved by the use of higher temperatures for both substrate c leaning and growth, Mn incorporation, and by increasing the degree of misorientation from {100} towards the {111}B.