DENSITY-MEASUREMENT OF MOLTEN SILICON BY AN IMPROVED ARCHIMEDIAN METHOD

Authors
SASAKI H TOKIZAKI E TERASHIMA K KIMURA S
Citation
H. Sasaki et al., DENSITY-MEASUREMENT OF MOLTEN SILICON BY AN IMPROVED ARCHIMEDIAN METHOD, Journal of crystal growth, 139(3-4), 1994, pp. 225-230
Citations number
13
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
139
Issue
3-4
Year of publication
1994
Pages
225 - 230
Database
ISI
SICI code
0022-0248(1994)139:3-4<225:DOMSBA>2.0.ZU;2-A
Abstract
A convenient technique for practicing accurate Archimedian density mea surements of molten silicon was developed and the temperature dependen ce of the density was obtained in the range of about 1440 to 1640-degr ees-C. The density at 1440-degrees-C was about 1% larger than the prev iously reported value. A change in the dependence slope was observed n ear 1540-degrees-C. Thermal volume expansion coefficients of about 1.0 X 10(-4) and 2.8 X 10(-4)-degrees-C-1 were obtained for temperatures below and above 1540-degrees-C, respectively.