P-TYPE DOPING OF HG0.4CD0.6TE USING ET4SB2

Authors
LEECH PW HEAZLE KD DEACON GB DICKSON RS WEST BO FAITH M FROST CR
Citation
Pw. Leech et al., P-TYPE DOPING OF HG0.4CD0.6TE USING ET4SB2, Journal of crystal growth, 139(3-4), 1994, pp. 247-250
Citations number
11
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
139
Issue
3-4
Year of publication
1994
Pages
247 - 250
Database
ISI
SICI code
0022-0248(1994)139:3-4<247:PDOHUE>2.0.ZU;2-N
Abstract
The p-type doping of Hg1-xCdxTe (x = 0.6) by tetraethyldistibine (Et4S b2) during metalorganic chemical vapor deposition is described. The gr owth experiments were performed using the interdiffused multilayer pro cess at a temperature of 280-degrees-C. The 77 K hole concentration wa s a function of Et4Sb2 flow rate, with an upper limit of almost-equal- to (1-2) X 10(16) cm-3.