THE EFFECT OF GROWTH TEMPERATURE ON THIN-FILM DEPOSITION OF YTTRIUM UNDER MOLECULAR-BEAM EPITAXIAL CONDITIONS

Authors
MUTHE KP GUPTA MK GANDHI DP VYAS JC KOTHIYAL GP SINGH KD SABHARWAL SC
Citation
Kp. Muthe et al., THE EFFECT OF GROWTH TEMPERATURE ON THIN-FILM DEPOSITION OF YTTRIUM UNDER MOLECULAR-BEAM EPITAXIAL CONDITIONS, Journal of crystal growth, 139(3-4), 1994, pp. 323-326
Citations number
21
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
139
Issue
3-4
Year of publication
1994
Pages
323 - 326
Database
ISI
SICI code
0022-0248(1994)139:3-4<323:TEOGTO>2.0.ZU;2-#
Abstract
The effect of the growth temperature on the deposition behavior of ytt rium on single crystal substrates of yttria-stabilized zirconia (YSZ), SrTiO3 and quartz under molecular beam epitaxial (MBE) conditions has been investigated. In the case of films deposited on YSZ and SrTiO3 a bove 150-degrees-C, an interesting observation related to the uptake o f oxygen by the film from the substrate is revealed by electron spectr oscopy for chemical analysis (ESCA), optical transmission/reflection a nd X-ray diffraction (XRD) measurements. No such effect in the case of films on SiO2 up to 400-degrees-C is observed.