Y. Waseda et al., THEORETICAL ESTIMATION OF THE EFFECT OF MINOR ELEMENTS ON THE SOLUBILITY OF OXYGEN IN SILICON MELT, Journal of crystal growth, 139(3-4), 1994, pp. 357-362
The effect of fourteen minor elements (Al, As, B, Bi, C, Ga, Ge, In, N
, P, Pb, S, Sb and Sn) on the solubility of oxygen in silicon melt has
been estimated using a recently developed theoretical equation, with
only fundamental physical parameters such as hard sphere diameter, ato
mic volume and molar heat of solution at infinite dilution as inputs.
The results are expressed in the form of interaction parameters. Altho
ugh only limited experimental data are available for comparison, the t
heoretical approach appears to predict the correct sign, but underesti
mates the magnitude of the interaction between oxygen and alloying ele
ments. The present theoretical approach is useful in making qualitativ
e predications on the effect of minor elements on the solubility of ox
ygen in silicon melt, when direct measurements are not available.