THEORETICAL ESTIMATION OF THE EFFECT OF MINOR ELEMENTS ON THE SOLUBILITY OF OXYGEN IN SILICON MELT

Citation
Y. Waseda et al., THEORETICAL ESTIMATION OF THE EFFECT OF MINOR ELEMENTS ON THE SOLUBILITY OF OXYGEN IN SILICON MELT, Journal of crystal growth, 139(3-4), 1994, pp. 357-362
Citations number
32
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
139
Issue
3-4
Year of publication
1994
Pages
357 - 362
Database
ISI
SICI code
0022-0248(1994)139:3-4<357:TEOTEO>2.0.ZU;2-#
Abstract
The effect of fourteen minor elements (Al, As, B, Bi, C, Ga, Ge, In, N , P, Pb, S, Sb and Sn) on the solubility of oxygen in silicon melt has been estimated using a recently developed theoretical equation, with only fundamental physical parameters such as hard sphere diameter, ato mic volume and molar heat of solution at infinite dilution as inputs. The results are expressed in the form of interaction parameters. Altho ugh only limited experimental data are available for comparison, the t heoretical approach appears to predict the correct sign, but underesti mates the magnitude of the interaction between oxygen and alloying ele ments. The present theoretical approach is useful in making qualitativ e predications on the effect of minor elements on the solubility of ox ygen in silicon melt, when direct measurements are not available.