CHROMIUM-DOPED SEMIINSULATING INP GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

Growth of chromium-doped, semi-insulating InP by metal-organic vapour phase epitaxy is described. Both hexacarbonyl chromium and bis-benzene chromium are shown to be efficient Cr precursors. The purity, structu ral and electrical properties of the layers are described. A compensat ing deep donor concentration of up to 3 x 10(16) cm-3 is reported with resistivity as high as 3 x 10(8) OMEGA cm. It is further shown that w hen Cr-doped InP is employed as a current blocking layer in buried het erostructure lasers, improved performance may be obtained compared wit h similar iron containing structures.