HIGH-FREQUENCY NOISE AND DIFFUSION-COEFFICIENT OF HOT-ELECTRONS IN BULK AL0.25GA0.75AS

Authors
DEMURCIA M RICHARD E GASQUET D DUBUC JP VANBREMEERSCH J ZIMMERMANN J
Citation
M. Demurcia et al., HIGH-FREQUENCY NOISE AND DIFFUSION-COEFFICIENT OF HOT-ELECTRONS IN BULK AL0.25GA0.75AS, Solid-state electronics, 37(8), 1994, pp. 1477-1483
Citations number
19
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
37
Issue
8
Year of publication
1994
Pages
1477 - 1483
Database
ISI
SICI code
0038-1101(1994)37:8<1477:HNADOH>2.0.ZU;2-#
Abstract
We present experimental results of hot electron noise in Si doped Al0. 25Ga0.75As test structures using pulsed high-frequency noise measureme nts. Noise temperature and longitudinal diffusion coefficient as funct ions of field strength are compared with those of Si doped GaAs. We fi nd significant changes at high fields. Results are discussed in regard of electron scattering mechanisms.