1 F AND G-R NOISE IN ALGAAS EPITAXIAL LAYERS

Authors
PASCAL F DEMURCIA M LECOY G VANDAMME LKJ
Citation
F. Pascal et al., 1 F AND G-R NOISE IN ALGAAS EPITAXIAL LAYERS, Solid-state electronics, 37(8), 1994, pp. 1503-1508
Citations number
12
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
37
Issue
8
Year of publication
1994
Pages
1503 - 1508
Database
ISI
SICI code
0038-1101(1994)37:8<1503:1FAGNI>2.0.ZU;2-F
Abstract
Low frequency noise measurements have been performed in AlxGa1-xAs tes t structures with x = 0.25 and x = 0.20 at 300 K. For samples with x = 0.25 the excess noise spectra show two Lorentzian shaped g-r contribu tions and 1/f noise and with x = 0.20 the main noise source is 1/f com ponent. The results are analysed as a function of the sample length in order to distinguish between bulk and interface noise contributions.