ANALYTICAL 2-DIMENSIONAL MODELING FOR POTENTIAL DISTRIBUTION AND THRESHOLD VOLTAGE OF THE SHORT-CHANNEL FULLY DEPLETED SOI (SILICON-ON-INSULATOR) MOSFET
V. Aggarwal et al., ANALYTICAL 2-DIMENSIONAL MODELING FOR POTENTIAL DISTRIBUTION AND THRESHOLD VOLTAGE OF THE SHORT-CHANNEL FULLY DEPLETED SOI (SILICON-ON-INSULATOR) MOSFET, Solid-state electronics, 37(8), 1994, pp. 1537-1542
A two-dimensional analytical model for fully depleted Sol MOSFETs is p
resented. An extensive study of potential distribution in the silicon
film is carried out for non-uniform doping distribution and extended t
o find an expression for threshold voltage in the sub micrometer regio
n. The results so obtained are verified with experimental data. The pr
esent model calculates a critical gate voltage (for short channel full
y depleted SOI devices) beyond which gate losses its control on drain
current. The advantages of SOI MOSFETs over the bulk counterparts are
explained on the basis of drain induced barrier lowering [DIBL]. It is
also shown that the threshold voltage for the thin film SOI MOSFET is
less than that of bulk MOSFET The short-channel effects, DIBL and thr
eshold voltage reduction, are well predicted in the present model.