ON THE RELAXATION OF FIELD-INDUCED OXIDE CHARGE IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS

Authors
MEINERTZHAGEN A HENRY V PETIT C ELHDIY A JOURDAIN M
Citation
A. Meinertzhagen et al., ON THE RELAXATION OF FIELD-INDUCED OXIDE CHARGE IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS, Solid-state electronics, 37(8), 1994, pp. 1553-1556
Citations number
30
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
37
Issue
8
Year of publication
1994
Pages
1553 - 1556
Database
ISI
SICI code
0038-1101(1994)37:8<1553:OTROFO>2.0.ZU;2-W
Abstract
We have studied the time decay of the positive charge induced into a 1 2 nm thick oxide of MOS capacitors by Fowler Nordheim tunnel injection . We show that this charge is due to trapped holes and that at the sam e time neutral traps are induced. We underline the similarity of the a bove decay with the time dependence observed in luminescence decay and dielectric depolarization which is supposed to be due to a many body process.