EFFECTS OF AC HOT-CARRIER STRESS ON N-MOSFETS AND P-MOSFETS WITH OXYNITRIDE GATE DIELECTRICS

Authors
JOSHI AB KWONG DL
Citation
Ab. Joshi et Dl. Kwong, EFFECTS OF AC HOT-CARRIER STRESS ON N-MOSFETS AND P-MOSFETS WITH OXYNITRIDE GATE DIELECTRICS, I.E.E.E. transactions on electron devices, 41(5), 1994, pp. 671-674
Citations number
24
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
41
Issue
5
Year of publication
1994
Pages
671 - 674
Database
ISI
SICI code
0018-9383(1994)41:5<671:EOAHSO>2.0.ZU;2-B
Abstract
Effects of AC hot carrier stress on n- and p-MOSFET's with pure, NH3-n itrided (RTN) and reoxidized nitrided (RTN/RTO) gate oxides are studie d. Irrespective of the gate dielectric used, n-MOSFET's show enhanced degradation but p-MOSFET's show suppressed degradation under AC stress as compared to DC stress for the same duration. Dependence of degrada tion on frequency and duty cycle of gate pulse is studied. Results sho w that the degradation under AC stress in n-MOSFET's is suppressed whe reas it is increased slightly in p-MOSFET's with the use of RTN/RTO ga te oxides instead of conventional gate oxides.